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1

A hybrid static/rotary UPS system

Journal:

IEEE Transactions on Industry Applications

Year:

1992

Language:

english

File:

PDF, 487 KB

english, 1992

2

+21 dBm erbium power amplifier pumped by a diode-pumped Nd:YAG laser

Grubb, S.G., Humer, W.F., Cannon, R.S., Windhorn, T.H., Vendetta, S.W., Sweeney, K.L., Leilabady, P.A., Barnes, W.L., Jedrzejewski, K.P., Townsend, J.E.

Journal:

IEEE Photonics Technology Letters

Year:

1992

Language:

english

File:

PDF, 257 KB

english, 1992

3

2.5-mW single-mode operation of 1.55-μm buried tunnel junction VCSELs

M. Ortsiefer, S. Baydar, K. Windhorn, G. Bohm, J. Rosskopf, R. Shau, E. Ronneberg, W. Hofmann, M.-C. Amann

Journal:

IEEE Photonics Technology Letters

Year:

2005

Language:

english

File:

PDF, 145 KB

english, 2005

4

[IEEE 2006 IEEE 20th International Semiconductor Laser Conference, 2006. Conference Digest. - Kohala Coast, HI, USA ()] 2006 IEEE 20th International Semiconductor Laser Conference, 2006. Conference Digest. - InP-based VCSELs with Buried Tunnel Junction for Optical Communication and Sensing in the 1.3-2.3 ¿m Wavelength Range

Ortsiefer, M., Grau, M., Rosskopf, J., Shau, R., Windhorn, K., Ronneberg, E., Bohm, G., Hofmann, W., Dier, O., Amann, M.-C.

Year:

2006

Language:

english

File:

PDF, 330 KB

english, 2006

5

AlGaAs double-heterostructure diode lasers fabricated on a monolithic GaAs/Si substrate

Windhorn, T. H., Metze, G. M., Tsaur, B-Y., Fan, John C. C.

Journal:

Applied Physics Letters

Year:

1984

Language:

english

File:

PDF, 473 KB

english, 1984

6

Growth of InAs-containing quantum wells for InP-based VCSELs emitting at 2.3 μm

Gerhard Boehm, Markus Grau, Oliver Dier, Kirsten Windhorn, Enno Roenneberg, Juergen Rosskopf, Robert Shau, Ralf Meyer, Markus Ortsiefer, Markus-Christian Amann

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 193 KB

english, 2007

7

Molecular dissociation by mid-IR femtosecond pulses

L. Windhorn, T. Witte, J.S. Yeston, D. Proch, M. Motzkus, K.L. Kompa, W. Fuß

Journal:

Chemical Physics Letters

Year:

2002

Language:

english

File:

PDF, 187 KB

english, 2002

8

Temperature dependent electron velocity-field characteristics for In0.53Ga0.47AS at high electric fields

T. H. Windhorn, L. W. Cook, G. E. Stillman

Journal:

Journal of Electronic Materials

Year:

1982

Language:

english

File:

PDF, 985 KB

english, 1982

9

Fabrication and use of a simple implant placement guide

Richard J Windhorn

Journal:

The Journal of Prosthetic Dentistry

Year:

2004

Language:

english

File:

PDF, 416 KB

english, 2004

10

A simple open-tray implant impression technique

Richard J. Windhorn, Thomas R. Gunnell

Journal:

The Journal of Prosthetic Dentistry

Year:

2006

Language:

english

File:

PDF, 192 KB

english, 2006

11

A simple technique for exposing margins on a solid working cast

Richard J. Windhorn

Journal:

The Journal of Prosthetic Dentistry

Year:

1998

Language:

english

File:

PDF, 243 KB

english, 1998

12

WA-B5 narrow-base Al0.5Ga0.5As/GaAs heterojunction phototransistors grown by metalorganic chemical vapor deposition

Milano, R.A., Windhorn, T.H., Anderson, E.R., Stillman, G.E., Dupuis, R.D., Dapkus, P.D.

Journal:

IEEE Transactions on Electron Devices

Year:

1979

Language:

english

File:

PDF, 156 KB

english, 1979

13

VIB-8 GaAs MESFET's and AlGaAs double-heterostructure diode lasers fabricated on monolithic GaAs/Si substrates

Choi, H.K., Windhorn, T.H., Tsaur, B.-Y., Metze, G.M., Turner, G.W., Fan, J.C.C.

Journal:

IEEE Transactions on Electron Devices

Year:

1984

Language:

english

File:

PDF, 168 KB

english, 1984

14

VA-5 Monolithic integration of GaAs/AlGaAs double-heterostructure LED's and Si MOSFET's

Choi, H.K., Turner, G.W., Windhorn, T.H., Tsaur, B.-Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1986

Language:

english

File:

PDF, 314 KB

english, 1986

15

Optically Active Binary Liquid Crystal Thermometry

Windhorn, Thomas H., Cain, Charles A.

Journal:

IEEE Transactions on Biomedical Engineering

Year:

1979

Language:

english

File:

PDF, 2.76 MB

english, 1979

16

Controlling molecular ground-state dissociation by optimizing vibrational ladder climbing

Witte, T., Hornung, T., Windhorn, L., Proch, D., de Vivie-Riedle, R., Motzkus, M., Kompa, K. L.

Journal:

The Journal of Chemical Physics

Year:

2003

Language:

english

File:

PDF, 470 KB

english, 2003

17

The electron velocity-field characteristic for n-In0.53Ga0.47As at 300 K

Windhorn, T.H., Cook, L.W., Stillman, G.E.

Journal:

IEEE Electron Device Letters

Year:

1982

Language:

english

File:

PDF, 283 KB

english, 1982

18

[IEEE Applied Power Electronics Conference and Exposition - Los Angeles, CA, USA (1990.03.11-1990.03.16)] Fifth Annual Proceedings on Applied Power Electronics Conference and Exposition - A hybrid static/rotary UPS system

Year:

1990

File:

PDF, 320 KB

1990

19

[IRE 1978 International Electron Devices Meeting - ()] 1978 International Electron Devices Meeting - AlGaAs-GaAs heterojunction phototransistors for fiber-optical communications

Milano, R.A., Windhorn, T.H., Anderson, E.R., Stillman, G.E., Dupuis, R.D., Dapkus, P.D.

Year:

1978

Language:

english

File:

PDF, 280 KB

english, 1978

20

[IRE 1981 International Electron Devices Meeting - ()] 1981 International Electron Devices Meeting - Electron drift velocities in In0.53Ga0.47As at very high electric fields

Windhorn, T.H., Cook, L.W., Stillman, G.E.

Year:

1981

Language:

english

File:

PDF, 286 KB

english, 1981

21

Monolithic GaAs/AlGaAs diode laser/deflector devices for light emission normal to the surface

Windhorn, T. H., Goodhue, W. D.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 441 KB

english, 1986

22

Liquid-phase epitaxial growth of lattice-matched InGaAsP on (100)-InP for the 1.15–1.31-μm spectral region

Feng, M., Windhorn, T. H., Tashima, M. M., Stillman, G. E.

Journal:

Applied Physics Letters

Year:

1978

Language:

english

File:

PDF, 563 KB

english, 1978

23

Be-implanted 1.3-μm InGaAsP avalanche photodetectors

Feng, M., Oberstar, J. D., Windhorn, T. H., Cook, L. W., Stillman, G. E., Streetman, B. G.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 460 KB

english, 1979

24

Room-temperature operation of GaAs/AlGaAs diode lasers fabricated on a monolithic GaAs/Si substrate

Windhorn, T. H., Metze, G. M.

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 500 KB

english, 1985

25

Electron transport in InP at high electric fields

Year:

1983

Language:

english

File:

PDF, 472 KB

english, 1983

26

Monolithic integration of GaAs/AlGaAs double-heterostructure LED's and Si MOSFET's

Choi, H.K., Turner, G.W., Windhorn, T.H., Bor-Yeu Tsaur,

Journal:

IEEE Electron Device Letters

Year:

1986

Language:

english

File:

PDF, 510 KB

english, 1986

27

Getting ahead of IVR: A demonstration of mid-infrared induced molecular dissociation on a sub-statistical time scale

Windhorn, Lars, Yeston, Jake S., Witte, Thomas, Fuß, Werner, Motzkus, Marcus, Proch, Detlev, Kompa, Karl-Ludwig, Moore, C. Bradley

Journal:

The Journal of Chemical Physics

Year:

2003

Language:

english

File:

PDF, 419 KB

english, 2003

28

High field temperature dependent electron drift velocities in GaAs

Windhorn, T. H.

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 435 KB

english, 1982

29

The influence of LPE growth techniques on the alloy composition of InGaAsP

Feng, M., Cook, L. W., Tashima, M. M., Windhorn, T. H., Stillman, G. E.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 499 KB

english, 1979

30

Monolithic two-dimensional surface-emitting arrays of GaAs/AlGaAs diode lasers

Donnelly, J. P., Goodhue, W. D., Windhorn, T. H., Bailey, R. J., Lambert, S. A.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 535 KB

english, 1987

31

High-field electron transport in InxGa1−xAsyP1−y (λg =1.2 μm)

Windhorn, T. H.

Journal:

Applied Physics Letters

Year:

1982

Language:

english

File:

PDF, 410 KB

english, 1982

32

Al0.5Ga0.5As-GaAs heterojunction phototransistors grown by metalorganic chemical vapor deposition

Milano, R. A., Windhorn, T. H., Anderson, E. R., Stillman, G. E., Dupuis, R. D., Dapkus, P. D.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 408 KB

english, 1979

33

Composition dependence of the influence of lattice mismatch on surface morphology in LPE growth of InGaAsP on (100) -InP

Feng, M., Tashima, M. M., Windhorn, T. H., Stillman, G. E.

Journal:

Applied Physics Letters

Year:

1978

Language:

english

File:

PDF, 575 KB

english, 1978

34

Electrically pumped room temperature CW VCSELs with 2.3 [micro sign]m emission wavelength

Ortsiefer, M., Böhm, G., Grau, M., Windhorn, K., Rönneberg, E., Rosskopf, J., Shau, R., Dier, O., Amann, M.-C.

Journal:

Electronics Letters

Year:

2006

Language:

english

File:

PDF, 122 KB

english, 2006

35

Long-wavelength monolithic VCSEL arrays with high optical output power

Ortsiefer, M., Baydar, S., Windhorn, K., Rönneberg, E., Rosskopf, J., Shau, R., Grau, M., Böhm, G., Amann, M.-C.

Journal:

Electronics Letters

Year:

2005

Language:

english

File:

PDF, 114 KB

english, 2005

36

Monolithic Integration of Si and GaAs Devices

Choi, H. K., Turner, G. W., Tsaur, B-Y., Windhorn, T. H.

Journal:

MRS Proceedings

Year:

1986

Language:

english

File:

PDF, 2.72 MB

english, 1986

37

SPIE Proceedings [SPIE Cambridge Symposium-Fiber/LASE '86 - Cambridge, MA (Monday 18 August 1986)] Integration and Packaging of Optoelectronic Devices - Monolithic Integration Of Si And GaAs Devices

Choi, H. K., Turner, G. W., Windhorn, T. H., Tsaur, B-Y., Hartman, Davis H., Holman, Robert L., Skinner, Doyle P.

Year:

1987

Language:

english

File:

PDF, 10.15 MB

english, 1987

38

SPIE Proceedings [SPIE 1985 International Technical Symposium/Europe - Cannes, France (Monday 25 November 1985)] Fiber Optic Sources and Detectors - AlGaAs Optoelectronic Devices On Monolithic GaAs/Si Substrates

Windhorn, T. H., Metze, G. M., Noblanc, Jean-Pierre

Year:

1986

Language:

english

File:

PDF, 341 KB

english, 1986

39

GaAs/AlGaAs Diode Lasers on Monolithic GaAs/Si Substrates

Windhorn, T. H., Turner, G. W., Metze, G. M.

Journal:

MRS Proceedings

Year:

1986

Language:

english

File:

PDF, 400 KB

english, 1986

40

Soil Scientists Revisit a High-Intensity Soil Survey in Northwest Illinois with Electromagnetic Induction and Traditional Methods

Doolittle, J. A., Windhorn, R. D., Withers, D. L., Zwicker, S. E., Heisner, F. E., McLeese, R. L.

Journal:

Year:

2008

File:

PDF, 1.84 MB

2008

41

How university presses are learning to serve digital humanists

Berkery, Peter, Windhorn, Annette, Lawlor, Bonnie

Journal:

Information Services & Use

Year:

2019

File:

PDF, 45 KB

2019

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